advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 40v simple drive requirement r ds(on) 28m fast switching characteristic i d 27a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 4.0 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data & specifications subject to change without notice ap9965geh/j rohs-compliant product parameter rating drain-source voltage 40 gate-source voltage + 16 continuous drain current 27 0.25 storage temperature range operating junction temperature range continuous drain current 17 pulsed drain current 1 80 -55 to 150 -55 to 150 31.25 total power dissipation thermal data parameter linear derating factor 1 maximum thermal resistance, junction-ambient (pcb mount) 3 200903094 g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP9965GEJ) are available for low-profile applications. s g d g d s to-251(j)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 40 - - v ?? v dss / ? t j breakdown voltage temperature coefficient reference to 25 : , i d =1ma - 0.03 - v/ : r ds(on) static drain-source on-resistance 2 v gs =10v, i d =18a - - 28 m ? ? 21 - s i dss drain-source leakage current v ds =40v, v gs =0v - - 1 ua drain-source leakage current (t j =125 o c) v ds =32v, v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 16v, v ds =0v - - + 30 ua q g total gate charge 2 i d =18a - 8.5 14 nc q gs gate-source charge v ds =30v - 1.6 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.1 - nc t d(on) turn-on delay time 2 v ds =20v - 5.3 - ns t r rise time i d =1a - 6.7 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 20.5 - ns t f fall time r d =20 - 4.5 - ns c iss input capacitance v gs =0v - 610 980 pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 1.8 2.4 ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. on-resistance vs. reverse diode drain current 3 ap9965geh/j 0 20 40 60 0.0 2.0 4.0 6.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 5.0v 4.5 v v g =3.0v 0 20 40 60 80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 5.0v 4.5 v v g = 3.0 v 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 0 5 10 15 20 25 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10.0 20.0 30.0 40.0 50.0 0 1020304050 i d , drain current (a) r ds(on) (m ? ) v gs =10v 10 30 50 70 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =12a t c =25 o c v gs =4.5v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 ap9965geh/j 0 1 10 100 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 4 8 12 16 20 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =20v v ds =25v v ds =30v 10 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge 0 10 20 30 40 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v
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